Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

Authors
Kuang, GK Bohm, G Graf, N Grau, M Rosel, G Meyer, R Amann, MC
Citation
Gk. Kuang et al., Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy, ELECTR LETT, 36(22), 2000, pp. 1849-1851
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
22
Year of publication
2000
Pages
1849 - 1851
Database
ISI
SICI code
0013-5194(20001026)36:22<1849:LWIDLG>2.0.ZU;2-I
Abstract
The authors have fabricated InGaAs-InGaAlAs-InP strained quantum well laser s with wavelengths as long as 2208nm using solid-source molecular-beam epit axy. A continuous-wave threshold current density of 370A/cm(2) at 20 degree sC and characteristic temperature of 53K have been achieved.