High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors

Authors
Yang, B Lambert, DJH Li, T Collins, CJ Wong, MM Chowdhury, U Dupuis, RD Campbell, JC
Citation
B. Yang et al., High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors, ELECTR LETT, 36(22), 2000, pp. 1866-1867
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
22
Year of publication
2000
Pages
1866 - 1867
Database
ISI
SICI code
0013-5194(20001026)36:22<1866:HBSAM>2.0.ZU;2-3
Abstract
The fabrication and characterisation of back-illuminated solar blind AlGaN metal-semiconductor-metal photodetectors is reported. The dark current of 4 0 x 40 mum devices is lower than the instrument measurement limitation of 2 0fA for a bias < 100V. The external quantum efficiency is as high as 48% an d the spectral response shows a sharp band edge drop-off at <similar to>280 nm.