InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Authors
Yu, KH Lin, KW Cheng, CC Lin, KP Yen, CH Wu, CZ Liu, WC
Citation
Kh. Yu et al., InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications, ELECTR LETT, 36(22), 2000, pp. 1886-1888
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
22
Year of publication
2000
Pages
1886 - 1888
Database
ISI
SICI code
0013-5194(20001026)36:22<1886:ICFTFH>2.0.ZU;2-U
Abstract
A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabri cated successfully and demonstrated. Because of the use of an n(+)-GaAs/p()-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate bar rier height and carrier confinement are improved. Therefore, low-leakage an d high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 degreesC. Therefore, thr studi ed InGaP/GaAs structure is suitable for high-power and high-temperature app lications.