Low-frequency noise in AlSb/InAs HEMTs

Authors
Kruppa, W Boos, JB Bennett, BR Yang, MJ
Citation
W. Kruppa et al., Low-frequency noise in AlSb/InAs HEMTs, ELECTR LETT, 36(22), 2000, pp. 1888-1889
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
22
Year of publication
2000
Pages
1888 - 1889
Database
ISI
SICI code
0013-5194(20001026)36:22<1888:LNIAH>2.0.ZU;2-G
Abstract
Measurements of the low-frequency noise in several types of AlSb/InAs HEMTs are reported. The slope of the noise level with frequency is close to idea l 1/f for some types, while others have significant generation-recombinatio n components. The Hooge parameter, alpha (H), for all the devices is in the range between 10(-3) and 10(-2) based on floating-gate measurements at low drain voltage.