Properties of micropatterned ferroelectric thin films fabricated by electron beam exposed chemical solution deposition process

Patterned ferroelectric PZT(45/55) thin films were fabricated by electron b eam exposed chemical solution deposition (CSD) process. For comparison, PZT thin films without patterning were also fabricated in the same conditions. The 100 nm PZT thin films fabricated by non-repeated CSD process with fill ing process exhibited good ferroelectric properties while the films without filling process showed large leakage current. The remanent polarization an d the coercive field were 16 muC/cm(2) and 120 kV/cm, respectively. However , ferroelectric properties of the patterned PZT thin films with filling pro cess could nor be confirmed due to large leakage current. These results sug gest that the film composition may be changed by electron beam irradiation or following development.