Ultrasonic wire bonding is an important technique in microelectronics packa
ging, as it provides electrical connections between an integrated circuit (
IC) and the chip carrier. As the bond quality can vary appreciably, it is i
mportant to develop some in-process monitoring method to improve the reliab
ility and quality of bonding. In this work, a piezoelectric lead zirconate
titanate (PZT) sensor was used to measure two critical parameters. They are
: (1) the temporal profiles of ultrasonic power and (2) the impact force im
parted to the bonding pad by the bonding tool. A calibrated wire strain gau
ge was also used to measure the impact dynamic Force and the static force a
pplied to the bond surface. This is compared to that of the PZT sensor.