Dual-wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum-well intermixing

A dual-wavelength laser source monolithically integrated with an isolator a nd a Y-junction coupler is fabricated by using a new quantum-well intermixi ng technique. The technique employs a buried Ge layer between the sample su rface and the spin-on silica film to control the bandgap tuning in selectiv e areas across a wafer. The integrated isolator can avoid the crosstalk bet ween the two channels of the device. Two distinct lasing wavelengths of 950 and 969 nm are coupled into one single output port through the transparent Y-junction coupler, The two channels have similar threshold current and sl ope efficiency.