A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-mum regime

Authors
Fischer, M Reinhardt, M Forchel, A
Citation
M. Fischer et al., A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-mum regime, IEEE PHOTON, 12(10), 2000, pp. 1313-1315
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
10
Year of publication
2000
Pages
1313 - 1315
Database
ISI
SICI code
1041-1135(200010)12:10<1313:AMGVSL>2.0.ZU;2-#
Abstract
An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-te mperature (RT) emission at 1.3 mum was developed by solid-source molecular beam epitaxy using a plasmasource for nitrogen activation. RT photopumped o peration is demonstrated at a wavelength of 1283 nm, Stimulated emission wa s observed up to a record high temperature of 143 degreesC, resulting in an emission wavelength of 1294 nm.