Optical reflectivity spectra are useful in assessing the structure of verti
cal-cavity surface-emitting lasers (VCSELs) but show little of the nature o
f the active quantum well (QW), Here we use photomodulated reflectance to i
dentify a region of an epitaxial wafer with optimal cavity-QW alignment. Al
InGaP-AlGaAs visible VCSEL devices fabricated from this region lased well,
compared with devices from a nearby control piece of the wafer which failed
to lase at all.