A numerical analysis of long-wavelength multi-junction photodiodes construc
ted from CdxHg1-xTe heterostructures is performed. The standard Newton iter
ative scheme is applied to solve the non-linear system of continuity equati
ons and the Poisson equation. All quantities are expressed as a function of
electric potential and quasi-Fermi levels. Results of computations are pre
sented in the form of maps and plots illustrating spatial distributions of
electrical potential and responsivity. Such an illustration enables us to e
xplain the effect of reverse sign of the photovoltage occurring in photoele
ctric devices being manufactured. (C) 2000 Elsevier Science B.V. All rights
reserved.