CONTROL OVER PLASM STATIC POTENTIALS IN E PITAXIAL GROWING OF DIAMONDON SILICON

Authors
APANOVICH IV CHAPLANOV AM
Citation
Iv. Apanovich et Am. Chaplanov, CONTROL OVER PLASM STATIC POTENTIALS IN E PITAXIAL GROWING OF DIAMONDON SILICON, Doklady Akademii nauk BSSR, 38(4), 1994, pp. 49-51
Citations number
5
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
38
Issue
4
Year of publication
1994
Pages
49 - 51
Database
ISI
SICI code
0002-354X(1994)38:4<49:COPSPI>2.0.ZU;2-9
Abstract
The paper presents the results of investigation of diamond film growth in low-temperature glow discharge plasma on a (111) Si substrate. It has been established that for 20V<U(p)-U(f)<100V conditions are create d for maintaining crystallization medium moderately supersaturated rel ative to diamond state, providede that the reactor is supplied with ga seous hydrocarbon compounds mixed with Ar to form glow discharge plasm a. The condition for matching diamond and Si lattices has been derived : for (110)c-parallel-to(110)si, [111]c-parallel-to[011]si epitaxial g rowth of diamond on Si takes place.