HIGH-RESOLUTION IMAGING OF ELECTRONIC DEVICES USING LINE MODIFIED-ASYMMETRIC CRYSTAL TOPOGRAPHY (LM-ACT)

X-ray topographic measurements are reported for implantation and super structure details in an otherwise perfect, parametric, single-crystal device. Image contrast in topographs is attributed to the combined eff ects of device implantation or deposition strains in the host crystal, X-ray absorption, and surface shadowing or edge enhancement of the X- ray beam and, also, perfection of the lattice at the atomic scale. Ste reo-pair images have been obtained to provide depth measurements. Sequ ential topographs have been utilized after various steps in device fab rication, ultimately, to monitor processing procedures. Comparison is made with dynamical theory calculations. The X-ray penetration depth a nd micrometer size of the thin-film nuclear emulsions used to record t he diffraction images are shown to be important factors in limiting sp atial resolution.