INTERFERENCE EFFECTS IN BRAGG-CASE SYNCHROTRON SECTION TOPOGRAPHY OF ELASTICALLY BENT SILICON IMPLANTED CRYSTALS

Citation
K. Wieteska et al., INTERFERENCE EFFECTS IN BRAGG-CASE SYNCHROTRON SECTION TOPOGRAPHY OF ELASTICALLY BENT SILICON IMPLANTED CRYSTALS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 233-239
Citations number
6
Categorie Soggetti
Physics
ISSN journal
03926737
Volume
19
Issue
2-4
Year of publication
1997
Pages
233 - 239
Database
ISI
SICI code
0392-6737(1997)19:2-4<233:IEIBSS>2.0.ZU;2-N
Abstract
White-beam synchrotron section topography was applied to a silicon cry stal implanted with 4.8 MeV alpha-particles elastically bent with the radius of curvature close to 100 m. A number of section patterns corre sponding to different reflections was analysed. It was found that the section pattern in the bent sample was drastically different from thos e observed in a flat sample. The difference consists in the occurrence of the sets of additional interference fringes covering a long distan ce up to several millimetres behind the main diffraction maximum. It w as possible to reproduce some characteristic features of the fringes b oth in the implanted and non-implanted region by numerical integration of the Takagi-Taupin equation.