REDUCTION OF MISFIT DISLOCATION DENSITY IN STRAINED INXGA1-XAS HETEROSTRUCTURES VIA GROWTH ON PATTERNED GAAS(001) SUBSTRATE

The [110]-oriented misfit dislocation density reduction in the growth of InxGa1-xAs(x = 0.06) heterostructure on GaAs (001) substrate patter ned with circular mesas has been observed with X-ray double-crystal to pography. It has been found that, depending on the InGaAs thickness on the mesa sidewall, there is a threshold which inhibits the glide of t hreading dislocations through the mesas. No misfit dislocations are ob served terminating on the top of the mesas. The experimental results o btained here are explained by the resistant effect of mesas from the p oint of view of the elastic strain energy of the patterned region.