A wideband electrostatic microwave switch fabricated by surface micromachining

An electrostatic microwave switch has been implemented by applying surface micromachining processes, crowave switch is gallium arsenide (GaAs), The st ructure or me microwave switch contains a gold coplanar waveguide and a sus pended aluminum membrane. The Al membrane is directly anchored to the sidew alls of the GaAs substrate. All processing temperatures are under 350 degre esC, The microwave switch operation is controlled by electrostatic force. T he experimental results of the microwave switch show a microwave isolation of -40 dB and an insertion loss of -0.5 dB in the range of 0.1 to 7 GHz. in addition to demonstrating the design and fabrication of the microwave swit ch, this work summarizes experimental results.