Raman scattering of a porous silicon superlattice

Citation
Ch. Cho et al., Raman scattering of a porous silicon superlattice, J KOR PHYS, 37(5), 2000, pp. 770-773
Citations number
9
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
37
Issue
5
Year of publication
2000
Part
2
Pages
770 - 773
Database
ISI
SICI code
0374-4884(200011)37:5<770:RSOAPS>2.0.ZU;2-U
Abstract
The Raman spectra were measured for a porous silicon superlattice, which wa s formed by periodic variation of the formation current density or the etch ing time. As the layers increased periodically the optical phonon modes shi fted about 3 cm(-1) from 520 cm(-1), and the full width at half maximum inc reased.