A study has been made on samples of dispersed vanadium dioxide (VO2) in a m
atrix of polyethylene glycol (PEG) doped with a quaternary ammonium salt (Q
AS), namely tetraethylammonium bromide. It has been established that under
the influence of the dopant the heating of a sample up to the temperature o
f the metal-semiconductor phase transition (MSPT) results in a phase inhomo
geneity of the sample. On the basis of the results of this study it is poss
ible to conclude that small concentrations of QAS in a PEG matrix can exert
a strong effect on the electronic structure of dispersed VO2 particles. Th
is is accompanied by the appearance of phase heterogeneity of VO2 which man
ifests itself in the fact that - with the onset of MSPT with increasing tem
perature - one portion of the substance passes into the metallic state, and
the other remains in the semiconductive state.