THE FIRST RESULTS OF SILICONIZATION ON SWIP-RFP DEVICE

Authors
ZHANG P LI Q LUO CW LI JP QIAN SJ FANG SQ YI P XUE J LI KH LUO JL HONO WY CAO Z ZHANG NM WANG QM LU J HUANG M ZHONG YZ ZHANG QC LUO CX
Citation
P. Zhang et al., THE FIRST RESULTS OF SILICONIZATION ON SWIP-RFP DEVICE, Journal of nuclear materials, 241, 1997, pp. 1008-1010
Citations number
11
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
Journal title
Journal of nuclear materials → ACNP
ISSN journal
00223115
Volume
241
Year of publication
1997
Pages
1008 - 1010
Database
ISI
SICI code
0022-3115(1997)241:<1008:TFROSO>2.0.ZU;2-N
Abstract
The first results of reversed field pinch (RFP) and ultra low safety f actor (ULQ) plasma experiments with siliconization on SWIP-RFP device are presented in this paper. The siliconization decreases the impurity concentrations in the plasma and increases the configuration sustainm ent time. Ion temperature has been estimated with the CV line of the v isible light spectra and the broadening of CIII lines in vacuum ultrav iolet (VUV) region. The anomalous ion hearing as well as the anomalous resistance were observed.