A new hole mobility model for hydrodynamic simulation

A new self-consistent hole mobility model that includes the lattice and the hole temperature has been proposed. By including the lattice and hole temp eratures as well as the effective transverse field and the interface Bred c harge, the model predicts the saturation of the hole drift velocity and sho ws the effects of Coulomb scattering, surface phonon scattering, and surfac e roughness scattering. The model has been incorporated into a device simul ation program, SNU-2D. The simulation results have been compared with the r eported experimental data and the measured 0.1 mum pMOSFETs, and they are s hown to agree quite well. The new model is expected to estimate the charact eristics of very short-channel devices in the hydrodynamic model simulation s. (C) 2000 Elsevier Science Ltd. All rights reserved.