On the optimum thickness to test dielectric reliability, in an integrated technology of power devices

This paper deals with the extensive characterization of dielectric films wi th thicknesses from 20 to 65 nm. Thick dielectric reliability has been inve stigated with time dependent dielectric breakdown (TDDB). TDDB tests are co n ducted under constant current injection. Assuming that the logarithm of t he median time-to-failure is described by a linear electric field dependenc e, a generalized empirical law for the long-term reliability of the dielect ric is proposed. This law takes into account the applied electric field and the dielectric thickness. This reliability law is available for dielectric thicknesses greater than 10 nm. A procedure to test dielectrics of various thicknesses is given in order to predict their reliability in power integr ated devices. Published by Elsevier Science Ltd.