Growth temperature dependence of donor-acceptor layered structure FET

Authors
Fukagawa, T Iizuka, M Kuniyoshi, S Kudo, K Tanaka, K
Citation
T. Fukagawa et al., Growth temperature dependence of donor-acceptor layered structure FET, MOLEC CRYST, 349, 2000, pp. 371-374
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
MOLECULAR CRYSTALS AND LIQUID CRYSTALS → ACNP
Volume
349
Year of publication
2000
Pages
371 - 374
Database
ISI
SICI code
Abstract
We have Fabricated field-effect transistors (FETs) using a TMTSF (donor) an d TCNQ (acceptor) layered structure and investigated the basic FET characte ristics. The transconductances of FETs depended on the substrate temperatur e.