Abnormal oxidation of TiSi2 in gate stacks found at 750-850 degrees C

Authors
Lind, C
Citation
C. Lind, Abnormal oxidation of TiSi2 in gate stacks found at 750-850 degrees C, MRS BULL, 25(11), 2000, pp. 10-10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MRS BULLETIN
ISSN journal
08837694 → ACNP
Volume
25
Issue
11
Year of publication
2000
Pages
10 - 10
Database
ISI
SICI code
0883-7694(200011)25:11<10:AOOTIG>2.0.ZU;2-E