Room temperature CW operation of GaN-based blue laser diodes by GaInN/GaN optical guiding layers

GaN-based shea wavelength laser diodes are the most promising key device fo r a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, minor facets. The cont inuous wave laser irradiation at room temperature could be achieved success fully by reducing the threshold current to 60 mA (4 kA/cm(2)). We have trie d to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.