High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector

Authors
Iwaya, M Terao, S Hayashi, N Kashima, T Detchprohm, T Amano, H Akasaki, I Hirano, A Pernot, C
Citation
M. Iwaya et al., High-quality AlxGa1-xN using low temperature-interlayer and its application to UV detector, MRS I J N S, 5, 2000, pp. NIL_40-NIL_45
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_40 - NIL_45
Database
ISI
SICI code
1092-5783(2000)5:<NIL_40:HAULTA>2.0.ZU;2-P
Abstract
Low-temperature (LT-) AlN interlayer reduces tensile stress during growth o f AlxGa1-xN, while simultaneously acts as the dislocation filter, especiall y for dislocations of which Burger's vector contains [0001] components. UV photodetectors using thus-grown high quality AlxGa1-xN layers were fabricat ed. The dark current bellow 50 fA at 10 V bias for 10 mum strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm(2) hav e been achieved.