Citation
T. Gehrke et al., Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition, MRS I J N S, 5, 2000, pp. NIL_64-NIL_69
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783
→ ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_64 - NIL_69
Database
ISI
SICI code
1092-5783(2000)5:<NIL_64:AP(OGA>2.0.ZU;2-C
Abstract
Growth of GaN and AlxGa1-xN thin films on 6H-SiC(0001) and Si(111) substrat
es with low densities of defects using the PENDEO(TM) process and the chara
cterization of the resulting materials are reported. The application of a m
ask on the GaN seed structures hinders the vertical propagation of threadin
g dislocations of the seed material during regrowth, but introduces. a misr
egistry in the overgrowing material resulting in low quality crystal growth
. This misregistry has been eliminated due to advanced processing: and the
exclusion of the masking layer. The new generation of samples do not show a
ny misregistry, as shown by transmission electron microscopy.