A TEM study of GaN grown by ELO on (0001) 6H-SiC

The misfit between GaN and 6H-SiC is 3.5 %o instead of 16 %o with sapphire, the epitaxial layers have similar densities of defects on both substrates. Moreover, the lattice mismatch between AlN and 6H-SiC is only 1%. Therefor e, epitaxial layer overgrowth (ELO) of GaN on AlN/6H-SiC could be a route t o further improve the quality of epitaxial layers. AIN has been grown by Ha lide Vapour Phase Epitaxy (HVPE) on (0001) 6H-SiC, thereafter a dielectric SiO2 mask was deposited and circular openings were made by standard photoli thography and reactive ion etching. We have examined GaN layers at an early stage of coalescence in order to identify which dislocations bend and try to understand why. The analysed islands have always the same hexagonal shap e, limited by {10(1) over bar0} facets. The a type dislocations are found t o fold many times from basal to the prismatic plane, whereas when a+c dislo cations bend to the basal plane, they were not seen to come back to a prism atic one.