We report the growth kinetics of GaN thin films using the single source pre
cursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wail reactor
. Transparent, smooth, epitaxial (FWHM of the alpha -GaN 0002 rocking curve
= 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 s
ubstrates in the temperature range of 870 - 1320K and high growth rates wer
e obtained (up to 4000 nm/hr). Film growth was studied as a function of sub
strate temperature as well as reactor pressure. Although high quality films
were obtained without using any additional source of nitrogen such as ammo
nia, we have investigated the effect of ammonia on the growth and propertie
s of the resulting films. The films obtained were characterized by XRD, RES
, XPS. AES, AFM, SEM and the room temperature PL spectroscopy of GaN films
grown exhibited the correct near band edge luminescence at 3.45 eV.