Formation of BN and AlBN during nitridation of sapphire using RF plasma sources

Evidence is presented that nitrogen plasma sources utilizing a pyrolytic bo ron nitride liner may be a significant source of B contamination during gro wth and processing. Auger electron spectroscopy analysis performed during n itridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al1-xBxN would explain the observation of a lattice constant several percent smaller than AW as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layer s grown on such a surface may be related to the segregation of BN during th e nitridation into its cubic phase.