Structural properties of (GaIn)(AsN)/GaAs MQW structures grown by MOVPE

In this work, we investigate the structural properties of (GaIn)(AsN)/GaAs multiple quantum wells (MQW) grown at law temperature by metalorganic vapou r phase epitaxy. The structural properties, in particular the In- and N-inc orporation, the lattice strain (strain modulation), the structural perfecti on of the metastable (GaIn)(AsN) material system and the structural quality of the (Gain)(AsN)/CaAs interfaces are investigated by means of high-resol ution x-ray diffraction, transmission electron microscopy (TEM), and second ary ion mass spectrometry. We demonstrate that (GaIn)(AsN) layers of high s tructural quality can be fabricated up to lattice mismatches of 4%. Our exp eriments reveal that N and In atoms are Localized in the quaternary materia l and no evidences of in-segregation or N-interdiffusion could be found. TE M analyses reveal a low defect density in the highly strained layers, but n o clustering or interface undulation could be detected. High-resolution TEM images show that (GaIn)(AsN)/GaAs interfaces are slightly rougher than GaA s/(GaIn)(AsN) ones.