Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Authors
Korotkov, RY Wessels, BW
Citation
Ry. Korotkov et Bw. Wessels, Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_258-NIL_263
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_258 - NIL_263
Database
ISI
SICI code
1092-5783(2000)5:<NIL_258:EPOODG>2.0.ZU;2-J
Abstract
Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electr on concentration increased as the square root of the oxygen partial pressur e. Oxygen is a shallow donor with a thermal ionization energy of 27 +/- 2 m eV. A compensation ratio of Theta = 0.3-0.4 was determined from Hall effect measurements. The formation energy of O-N of E-F = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.