High-temperature reliability of GaN electronic devices

High-quality GaN was grown using gas-source molecular-beam epitaxy (GSMBE). The mobility of undoped GaN was 350 cm(2)/Vsec and the carrier concentrati on was 6x10(16) cm(-3) at room temperature. A GaN metal semiconductor field -effect transistor (MESFET) and an n-p-n GaN bipolar junction transistor (B JT) were fabricated for high-temperature operation. The high-temperature re liability of the GaN MESFET was also investigated. That is, the lifetime of the EET at 673 K was examined by continuous current injection at 673 K. We confirmed that the FET performance did not change at 673 K for over 1010 h . The aging performance of the BJT at 573 K was examined during continuous current injection at 573 K for over 850 h. The BJT performance did not chan ge at 573 K. The current gain was about 10. No degradation of the metal-sem iconductor interface was observed by secondary ion-mass spectrometry (SIMS) and transmission electron microscopy (TEM). It was also confirmed by using Si-ion implantation that the contact resistivity of the GaN surface and el ectrode materials could be lowered to 7x10(-6) ohmcm(2).