Probing nitride thin films in 3-dimensions using a variable energy electron beam

Authors
Trager-Cowan, C McColl, D Sweeney, F Grimson, STF Treguer, JF Mohammed, A Middleton, PG Manson-Smith, SK O'Donnell, KP Van der Stricht, W Moerman, I Demeester, P Wu, MF Vantomme, A Zubia, D Hersee, SD
Citation
C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_347 - NIL_352
Database
ISI
SICI code
1092-5783(2000)5:<NIL_347:PNTFI3>2.0.ZU;2-#
Abstract
In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGa N epilayers and EBSD patterns obtained from two silicon-doped 3 mum thick G aN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire s ubstrate misoriented by 10 degrees toward the m-plane (10 (1) over bar0).