MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics

We report the growth and characterization of quaternary AlGalnN. A combinat ion of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter a s functions of the quaternary compositions. The observation of room tempera ture PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN land pos sibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD an d PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.