Homo-epitaxial growth on misoriented GaN substrates by MOCVD

The N-side of GaN single crystals with off-angle orientations of 0 degrees, 2 degrees, and 4 degrees towards the [10 (1) over bar0] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two ord ers of magnitude as compared with homo-epitaxial films grown on the exact ( 000 (1) over bar) surface. The features still found on the 4 degrees misori ented sample after growth can be explained by a model involving the interac tion of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.