GaN 20-mm diameter ingots grown from melt-solution by seeded technique

In this paper, we describe the seeded growth of similar to 20 mm diameter 1 5 mm long GaN ingots from the melt-solution. This is the first successful a ttempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000 degreesC at less than 2 atm ambient pressure. Growth was performed at similar to2 mm/hr growth rate . X-ray diffraction revealed polycrystalline structure of the ingots. Homoe pitaxial GaN layers were deposited by HVPE technique on the substrates, whi ch were fabricated from the grown GaN ingots.