Simulation of H behavior in p-GaN(Mg) at elevated temperatures

Authors
Myers, SM Wright, AF Petersen, GA Seager, CH Crawford, MH Wampler, WR Han, J
Citation
Sm. Myers et al., Simulation of H behavior in p-GaN(Mg) at elevated temperatures, MRS I J N S, 5, 2000, pp. NIL_424-NIL_429
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_424 - NIL_429
Database
ISI
SICI code
1092-5783(2000)5:<NIL_424:SOHBIP>2.0.ZU;2-X
Abstract
The behavior of H in p-GaN(Mg) at temperatures >400 degreesC is modeled by using energies and vibration frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquanti tatively with experiment for the solubility, uptake, and release of the H w hen account is taken of a surface barrier.