Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

Authors
Zhou, L Khan, F Ping, AT Osinski, A Adesida, I
Citation
L. Zhou et al., Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, MRS I J N S, 5, 2000, pp. NIL_442-NIL_447
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_442 - NIL_447
Database
ISI
SICI code
1092-5783(2000)5:<NIL_442:COTOCO>2.0.ZU;2-3
Abstract
Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlatti ces (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the supe rlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an eff ective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of R-c = 4.6x10(-4) Omega -cm(2) is achieved fo r unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3x10(-4) O mega -cm(2) after annealing for 5 minutes at 300 degreesC.