Lattice location of deuterium in plasma and gas charged Mg doped GaN

We have used ion channeling to examine the lattice configuration of deuteri um in Mg doped GaN grown by MOCVD. The deuterium is introduced by exposure to gas phase or ECR plasmas. A density functional approach including lattic e relaxation, was used to calculate total energies for various locations an d charge states of hydrogen in the wurtzite Mg doped GaN lattice. Results o f channeling measurements are compared with channeling simulations for hydr ogen at lattice locations predicted by density functional theory.