Surface conversion effects in plasma-damaged p-GaN

The near-surface (400-500 Angstrom) of p-GaN exposed to high density plasma s is found to become more compensated through the introduction of shallow d onors. At high ion fluxes or ion energies there can be type-conversion of t his surface region. Two different methods for removal of the damaged surfac e were investigated; wet etching in KOH, which produced self-limiting etch depths or thermal annealing under N-2 which largely restored the initial el ectrical properties.