Zirconium mediated hydrogen outdiffusion from p-GaN

We have shown that Zr-based metallization can effectively remove hydrogen f rom the p-type GaN subsurface, which eventually leads to the formation of a n ohmic contact. As the release of hydrogen starts at similar to 900 degree sC, the thermal stability of the contact system is of particular importance . The remarkable thermal behavior of the ZrN/ZrB2 metallization is associat ed to the microstructure of each individual Zr-based compound, as well as t o the interfacial crystalline accommodation.