Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

Authors
Michel, A Hanser, D Davis, RF Qiao, D Lau, SS Yu, LS Sun, W Asbeck, P
Citation
A. Michel et al., Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures, MRS I J N S, 5, 2000, pp. NIL_520-NIL_525
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_520 - NIL_525
Database
ISI
SICI code
1092-5783(2000)5:<NIL_520:GACOPE>2.0.ZU;2-8
Abstract
Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and com pared to similarly doped GaN standard films grown in the same reactor. Chem ical analysis of the films, via secondary ion mass spectrometry (SIMS), rev ealed comparable Mg concentrations of similar to 2x10(19) atoms/cm(3) in al l films. The Mg-doped GaN standard sample had a sheet conductance of 7-muS compared to a sheet conductance of 20-muS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.