Temperature distribution in InGaN-MQW LEDs under operation

Authors
Schwegler, V Seyboth, M Schad, S Scherer, M Kirchner, C Kamp, M Stempfle, U Limmer, W Sauer, R
Citation
V. Schwegler et al., Temperature distribution in InGaN-MQW LEDs under operation, MRS I J N S, 5, 2000, pp. NIL_556-NIL_561
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_556 - NIL_561
Database
ISI
SICI code
1092-5783(2000)5:<NIL_556:TDIILU>2.0.ZU;2-D
Abstract
The temperature distribution in InGaN-MQW light emitting diodes was examine d during operation with spatially resolved micro-Raman and micro-Electrolum inescence measurements. The experimental results were compared to finite el ement simulations. A good agreement between the different experimental and calculated data is found. Maximum operation temperatures up to 140 degreesC at a moderate forward currents of 30 mA are revealed by all three independ ent methods. Influences of substrate thickness, different substrates, and e ven bond-wires are shown.