Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures

We report on an experimental study of microstructure-based lasing in an opt ically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achi eved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separa te confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures d ue to strain relaxation. The temperature sensitivity of the lasing waveleng th was found to be twice as low as that of bulk-like GaN films. Based on th ese results, we discuss possibilities for the development of ultra-violet l aser diodes with increased temperature stability of the emission wavelength .