Photoluminescence (PL) spectroscopy was carried out on a series of Si-doped
bulk InGaN films in the law indium(In) composition regime. Room temperatur
e PL showed a factor of 25 increase in integrated intensity as the In compo
sition was increased from 0 to 0.07. Temperature dependent PL data was fit
to an Arrhenius equation to reveal an increasing activation energy for ther
mal quenching of the PL intensity as the In composition is increased. Time
resolved PL measurements revealed that only the sample with highest In (x=0
.07) showed a strong spectral variation in decay time across the T=4K PL re
sonance, indicative of recombination from localized states at low temperatu
res. The decay times at room temperature were non-radiatively dominated for
all films, and the room temperature (non-radiative) decay times increased
with increasing In, from 50-230 psec for x=0-0.07. Our data demonstrate tha
t non-radiative recombination is less effective with increasing in composit
ion.