The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films

Citation
M. Kuball et al., The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films, MRS I J N S, 5, 2000, pp. NIL_635-NIL_640
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_635 - NIL_640
Database
ISI
SICI code
1092-5783(2000)5:<NIL_635:TUOMST>2.0.ZU;2-K
Abstract
We have investigated the high-pressure high-temperature annealing of Mg/P-i mplanted GaN films using visible and ultraviolet (UV) micro-Raman spectrosc opy. The results illustrate the use of Raman spectroscopy to monitor proces sing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface lay er of the sample as well as averaged over the sample layer thickness. We fi nd the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500 degreesC under nitrogen overpressures o f 1.5GPa. No significant degradation effects occurred in the GaN surface la yer during the annealing. The high nitrogen overpressures proved very effec tive in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implant ed GaN films were investigated at different temperatures and excitation wav elengths to study the GaN phonon density of states.