Photoluminescence and cathodoluminescence of GaN doped with Pr

In this paper we have reported the observation of visible photoluminescence (PL) and cathodoluminescence (CL) of Pr implanted in GaN. The implanted sa mples were given isochronal thermal annealing treatments at a temperature o f 1100 degrees C in NH3, N-2, Ar-2, and in forming gas N-2 + H-2, at atmosp heric pressure to recover implantation damages and activate the rare earth ions. The sharp characteristic emission lines corresponding to Pr3+ intra-3 f(n) -shell transitions are resolved in the spectral range from 350 nm to 1 150 nm and observed over the temperature range of 12 K-335 K. The PL and CL decay kinetics measurement was performed for P-3(1), P-3(0) and D-1(2) lev els.