High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges

Authors
Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation
Ap. Zhang et al., High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges, MRS I J N S, 5, 2000, pp. NIL_715-NIL_720
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_715 - NIL_720
Database
ISI
SICI code
1092-5783(2000)5:<NIL_715:HDPDII>2.0.ZU;2-9
Abstract
The effects of de chuck self-bias and high density source power (which pred ominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma o f Cl-2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient s urface, with a typical depth of the non-stoichiometry being similar to 500 Angstrom. Post-etch annealing was found to partially restore the diode char acteristics.