Metal/GaN contacts studied by electron spectroscopies

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelec tron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and st oechiometric GaN samples were obtained using in situ hydrogen plasma treatm ent and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov a nd Frank van der Merwe modes respectively. The interfaces are sharp and non -reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN wer e measured using XPS.