Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

Authors
Bonfiglio, A Lomascolo, M Traetta, G Cingolani, R Di Carlo, A Della Sala, F Lugli, P Botchkarev, A Morkoc, H
Citation
A. Bonfiglio et al., Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells, MRS I J N S, 5, 2000, pp. NIL_834-NIL_839
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
10925783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_834 - NIL_839
Database
ISI
SICI code
1092-5783(2000)5:<NIL_834:IOIEFO>2.0.ZU;2-W
Abstract
The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namel y composition well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an ana lytic model based on the envelope function formalism which accounts for scr eening and built-in field, and by a full self-consistent tight-binding mode l.