Emission at 247 nm from GaN quantum wells grown by MOCVD

Photoluminescence (PL) spectra were measured at room temperature for GaN qu antum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheri c-pressure metal organic chemical vapor deposition (MOCVD). The thickness o f the GaN QW layers was systematically varied from one monolayer to four mo nolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.